Abstract
AbstractA low phase noise VCO with bond wire inductor for DVB‐H is implemented in TSMC CMOS 0.18 μm. The bond wire VCO exhibits −137 dBc/Hz at 1 MHz with the 5 mA current consumption. To meet the DVB‐H phase noise requirement, bond wire modeling is introduced in this paper. Due to the bond wire characteristics, Q value of the VCO inductor is more than 25 at 1 GHz. The proposed wire bond inductor provides an additional frequency tuning option after IC fabrication by modifying the length of the wire bond. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 859–863, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23228
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