Abstract
The monolithic stacked design is expected to solve the challenges of wiring difficulties, complex fabrication processes, and low resolution. However, a photodetector array with low operating voltage that is suitable for imaging applications has not been proposed. Here, a perovskite photodetector array with a monolithic stacked structure is proposed. The CH3NH3PbI3 photodetector has a low power consumption off-state (0 V) and on-state (−2 V) voltage, and the highest responsivity and specific detectivity of 0.39 A/W and 4.53×1012 Jones at 775 nm, respectively. The rise time and decay time are 111 µs and 250 µs respectively. In addition, the imaging application shows high contrast, which provides a simple and effective way to prepare high performance perovskite imaging devices.
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