Low operating currents of monolithically integrated 780 nm∕650 nm-band self-sustained pulsating lasers with silicon nitride current blocking layers

Abstract

The characteristics of monolithically integrated 780 nm/650 nm-band self-sustained pulsating (SSP) lasers with silicon nitride current blocking layers are reported. The record low operating current of 60 mA at 5 mW, 70/spl deg/C and a characteristic temperature of 90 K over 20 to 70/spl deg/C were obtained from the 650 nm-band SSP lasers. The attenuation factor of the visibility was observed to be as low as 0.3, which ensures SSP operations of the dual-mode lasers.