Abstract
Low operating current and high-temperature operation has been demonstrated in 650-nm AlGaInP high-power laser diodes with real refractive index guided self-aligned (RISA) structure. The RISA structure features an Al/sub 0.5/In/sub 0.5/P current blocking layer, which leads to small internal loss in the waveguide and substantially reduced operating carrier density. The resultant operating current for 50-mW continuous-wave at 70/spl deg/C is as low as 98 mA, which is almost a half of the lowest value ever reported.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Journal of Selected Topics in Quantum Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
