Abstract

Low on-resistance and low feedback-charge lateral power MOSFETs have been developed. This is achieved by using a new lateral power MOSFET structure with multi-drain regions. The high-efficiency factor R/sub on//spl middot/Q/sub gd/ of the proposed power MOSFETs is improved to less than half that of conventional trench gate power MOSFETs with tens of m/spl Omega/ of specific on-state resistance, R/sub on/. These new power MOSFETs are useful to improve the power convergent efficiency of DC/DC converters. With these lateral power MOSFETs it is also possible to integrate a CMOS pre-driver in the same chip in order to reduce parasitic gate impedance between the gate of the power MOSFET and the output of CMOS pre-drivers and to achieve high-frequency drive properly.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.