Abstract
A low-contact-resistance, low-resistivity magnesium aluminum (Mg/Al) layered metal is described. Measurements according to the transmission line model showed a specific contact resistivity of 2.2 × 10−7 Ω cm2 to an n-type planar silicon test resistor. A barrier height of 0.46 eV for Mg-nSi contacts was confirmed for Schottky diodes.
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