Abstract
Low ohmic contact resistance m-plane AlGaN/GaN heterojunction field-effect transistors were demonstrated using a regrown n+-GaN contact layer. An ohmic contact resistance of 0.25 Ω·mm was obtained with an 80-nm-thick Si-doped regrown GaN contact layer deposited by metal organic chemical vapor deposition. Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors were demonstrated with a threshold voltage of +1.4 V and 2.0 mΩ·cm2 on-state resistances at +5 V of gate–source voltage.
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