Abstract
We have developed voltage and charge sensitive FET preamplifiers which feature ultra low noise, convenience and flexibility for phonon and ionization detectors operated at 20 mK. With an NJ132L J-FET, the white noise of the voltage amplifier is 1.1 nV/√Hz at room temperature and 0.9 nV/√Hz when the FET is cooled to ≈120 K; the 1 f knee is below 100 Hz. The power dissipation of the FET, about 7 mW in our application, allows it to be used in a 4 K environment. With the same cooled FET, the charge amplifier has shown a noise of 120 e − rms with a total input capacitance of 45 pF.
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