Abstract
Terahertz (THz) hot-electron bolometer mixers reach a unique combination of low noise, wide noise bandwidth, and high operation temperature when 6 nm thick superconducting MgB2 films are used. We obtained a noise bandwidth of 11 GHz with a minimum receiver noise temperature of 930 K with a 1.63 THz Local Oscillator (LO), and a 5 K operation temperature. At 15 K and 20 K, the noise temperature is 1100 K and 1600 K, respectively. From 0.69 THz to 1.63 THz, the receiver noise increases by only 12%. Device current-voltage characteristics are identical when pumped with LOs from 0.69 THz up to 2.56 THz, and match well with IVs at elevated temperatures. Therefore, the effect of the THz waves on the mixer is totally thermal, due to absorption in the π conduction band of MgB2.
Highlights
Terahertz (THz) hot-electron bolometer mixers reach a unique combination of low noise, wide noise bandwidth, and high operation temperature when 6 nm thick superconducting MgB2 films are used
The discussed limitation of NbN Hot-Electron Bolometer (HEB) mixers is determined by the limited HEB mixer gain bandwidth (GBW) caused by a finite electron energy relaxation rate
The step forward was made with MgB2 thin films deposited by Hybrid Physical Chemical Vapor Deposition (HPCVD) and 10–20 nm thick films with a Tc 1⁄4 33 K–37 K have been obtained
Summary
Terahertz (THz) hot-electron bolometer mixers reach a unique combination of low noise, wide noise bandwidth, and high operation temperature when 6 nm thick superconducting MgB2 films are used.
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