Abstract
Normally on and normally off two-dimensional electron gas field-effect transistors (TEGFET’s) have been fabricated. Source, drain, and gate are directly deposited on the Si-doped AlGaAs top layer without any recess. At 10 GHz noise figure is 2.3 dB for both types with an associated gain of 10.3 and 7.7 dB for normally on and normally off device respectively. High performance normally off TEGFET opens a large field of application.
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