Abstract
Schottky-barrier varactor and mixer diodes have been made from Ge-doped GaAs layers grown by molecular beam epitaxy. A microstrip parametric amplifier circuit incorporating a hyperabrupt varactor diode has given a noise temperature of 120 K and bandwidth of 180 MHz at 15 dB gain when pumped at 34 GHz, and a mixer diode mounted in a cryogenic receiver circuit had an s.s.b. noise temperature of 180 K at 90 GHz.
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