Low-noise electronics for semiconductor detectors

Abstract

Abstract A possible way to attain the best energy resolution of semiconductor detectors is discussed in this report. It is carried out through the matching of detector parameters and parameters of field-effect transistors (FET) of input stages in charge-sensitive preamplifiers (CSP). Four types of low-noise FETs for detectors of various capacitance are presented, the noise response of transistors is discussed. Thin films low-noise feedback resistors with nominals of 10 6 to 10 15 Ω are developed. The energy resolution of various detectors with low-noise electronics is presented.