Low-Noise Amplifiers Using 100-nm Gate Length GaN-on-Silicon Process in W-Band

Abstract

Two low-noise amplifiers fabricated with 100-nm gate length gallium nitride (GaN)-on-silicon process in $W$ -band are presented in this work. One has a gain of 17.5–20.5 dB in 77.5–84 GHz with 3.8–4.7-dB noise figure (NF), the other has wider bandwidth of 78.5–90 GHz with 14.5–17-dB gain and 4.5–5.2-dB NF. The chip sizes of these two low-noise amplifiers (LNAs) are $3\times 1.6$ mm2 and $3\times 1.4$ mm2 separately. The power dissipation of these two LNAs is about 190 mW. These LNAs can be integrated with high-power GaN power amplifier on the same chip, which avoids the peripheral packaging loss and achieves smaller module size. The universal gate length in commercial process with low-cost silicon substrate brings these LNAs great potential for mass production in future millimeter-wave communications.