Abstract
The paper presents design approach for realizing amplifiers for 1.7 to 2.1 GHz, 2.1 to 2.3 GHz, 2.3 to 2.5 GHz, 2.5 to 2.7 GHz frequency bands. An interstage matching network is designed by realizing a sloped insertion loss function, in order to compensate the gain slope of the two stages. The gain ripple and bandwidth perturbations due to the deviation from the exact insertion loss function is minimized using performance optimization. Two stage GaAs-FET amplifiers are realized using the above approach. This envisages the use of minimum variants for the production and have excellent reproducibility. Performance test results are also included for the developed amplifiers.
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