Abstract
This paper is devoted to the development of a low-noise amplifier for the range of 57–64 GHz based on a gallium nitride heterostructure. The test HEMT-transistors based on gallium nitride are measured, which made it possible to create the transistor models: the Fujii and Pospeshalskii models. The basic diagram of the amplifier, which is composed of 4 cascades, is designed and the full electrodynamic calculation of the topology is carried out in CAD ADS. The prepared sample is measured, which showed its working ability in the required frequency range (the gain is larger than 16 dB, the coefficient of noise is smaller than 6.5 dB), and a good agreement between the results of the calculations and measurements is found. The technological stage used for the formation of through holes, which provide the common grounding plane of the circuit elements, is described.
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