Abstract
In low misfit systems (m < 1%)the elemental dislocation mechanisms can be observed over large areas; thisprovides information on the ways the relaxation proceeds in higher misfitheteroepitaxial systems where large dislocation densities are rapidly generatedand in which these mechanisms are not easy to discover among dislocationconfigurations resulting from this highly deformed state. Heteroepitaxial(GaAs/Ge, SiGe/Si, GaInAs/GaAs) and homoepitaxial (Si/Si(As)) systems wereconsidered in which the relaxation steps were studied: nucleation, and dislocationmultiplication. The Matthews mechanism for misfit dislocation nucleation wasobserved in a very metastable situation. This was ascribed to thermal activationof the source length rather than to the processes reported in the literature.During the development of dislocations several types of interaction occurredleading to threading segments. The very frequent occurrence of cross-slipand multiple cross-slip events allows the relaxation to proceed in spite ofblocking interactions. This unexpected easy cross-slip can be related to ashrinkage of the fault ribbon close to the surface due to image forces.
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