Abstract
A theoretical investigation of the properties of excitons in type-II InP quantum ring deposited on a wetting layer and embedded in a matrix made of GaInP material is presented. The energies of the low-lying states as functions of the strength of a magnetic field applied along the growth axis for rings with different profiles are calculated by means of the diagonalization method. We find that the increase of the wetting layer thickness as the smoothness of the transverse cross section profile lead to a lowering of the effective barrier height for the electron in-plane motion and an increase of the electron tunnelling toward the axis.
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