Abstract
In this work a novel ultra-low loss transmission media for RF GaN-on-low-resistivity silicon (LR-Si) substrates (σ <; 40 Ω.cm) has been successfully demonstrated. The developed shielded-microstrip lines achieve comparable performance to those on semi-insulating (SI) GaAs substrates with transmission loss of 0.9 dB/mm for frequencies up to 67 GHz. Line performance was further enhanced by additional elevation of the shielded-microstrip lines using air-bridge technology above a 5 μm layer of benzocyclobutene (BCB) on shielded metalized ground planes. Transmission loss of 0.6 dB/mm for frequencies up to 67 GHz was obtained as a result of the extra elevation. Structure parameters were designed and optimized based on EM simulation for best performance. The work shows that the RF energy coupled into the substrate was eliminated, indicating the suitability of III-V-on-LR Si technology for millimeter-wave applications.
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