Abstract
We design, fabricate, and demonstrate a silicon nitride (Si(3)N(4)) multilayer platform optimized for low-loss and compact multilayer photonic integrated circuits. The designed platform, with 200 nm thick waveguide core and 700 nm interlayer gap, is compatible for active thermal tuning and applicable to realizing compact photonic devices such as arrayed waveguide gratings (AWGs). We achieve ultra-low loss vertical couplers with 0.01 dB coupling loss, multilayer crossing loss of 0.167 dB at 90° crossing angle, 50 μm bending radius, 100 × 2 μm(2) footprint, lateral misalignment tolerance up to 400 nm, and less than -52 dB interlayer crosstalk at 1550 nm wavelength. Based on the designed platform, we demonstrate a 27 × 32 × 2 multilayer star coupler.
Highlights
Recent developments in photonic integrated circuits (PICs) [1] are attracting strong interest due to their advances of building scalable, high-throughput, and low-cost on-chip optical communication system
We achieve ultra-low loss vertical couplers with 0.01 dB coupling loss, multilayer crossing loss of 0.167 dB at 90° crossing angle, 50 μm bending radius, 100 × 2 μm2 footprint, lateral misalignment tolerance up to 400 nm, and less than −52 dB interlayer crosstalk at 1550 nm wavelength
Based on the designed platform, we demonstrate a 27 × 32 × 2 multilayer star coupler
Summary
Recent developments in photonic integrated circuits (PICs) [1] are attracting strong interest due to their advances of building scalable, high-throughput, and low-cost on-chip optical communication system. Typical reported values for multilayer crossing losses are 0.4-0.6 dB [7], or reasonably low crossing loss of 0.254 dB when using a relatively wide waveguide width of 15 μm [3]. We report a Si3N4/SiO2 multilayer platform design with core thickness of 200 nm and an interlayer gap of 700 nm optimized for compact multilayer photonic integrated circuits involving devices such as arrayed waveguide gratings (AWGs) with smaller than a 3 × 1 mm die. Based on this design, no measurable excess bending loss is reported with 50 μm bending radius. We demonstrate a 27 × 32 × 2 multilayer star coupler, which is useful for future 3-D photonic integrated devices
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