Abstract
Deformation of HfN thin films deposited by the reactive sputtering method on silicon and alumina substrates has been investigated using depth-sensing indentation. The experiments performed in a low load range (2−50 mN) revealed that even extremely shallow indentations were affected by the elastic/plastic response of the substrate. The analysis of the shape of the indentation load-depth hysteresis loops and of conventional hardness data was supplemented by considerations based on the recently proposed energy principle of indentation.
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