Abstract
Metamorphic InP/In/sub 0.53/Ga/sub 0.47//InP double heterojunction bipolar transistors (mHBT) were grown and fabricated. And f/sub /spl tau// and f/sub max/ of 268 and 339 GHz were measured, respectively - both records for mHBTs. The DC current gain /spl beta/ is /spl ap/ 35 and V/sub BR,CEO/ = 5.7 V. The collector leakage current I/sub cbo/ is 90 pA at V/sub cb/ = 0.3 V. A 70 nm SiO/sub 2/ dielectric sidewall was deposited on the emitter contact to permit a longer InP emitter wet etch and increase device yield. The metamorphic buffer layer is InP - employed because of its high thermal conductivity for minimum device thermal resistance.
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