Abstract

A centrifugation process of a zeolite precursor was investigated for hydrothermal synthesis of low-k pure silica. By introducing the centrifugation process, breakdown electric fields for low-k pure silica zeolite films were improved. The pure silica zeolite precursor was fabricated by using a two-step synthesis method. The pure silica zeolite precursor was mixed with a surfactant after the centrifugation process, and then spin-coated on a Si substrate. After annealing at 400°C in nitrogen (N2), a low-k pure silica zeolite film was formed. By applying the centrifugation process, the electric breakdown electric field became larger, from 2.3 MV/cm to 3.3 MV/cm. At the centrifugation process, particles were separated by a density of OH-groups. As a result, low-k film with a high breakdown electric field of up to 4.0 MV/cm to 3.3 MV/cm and a low dielectric constant of 2.0 was obtained.

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