Abstract
III-V nitride-based MISFETs have been fabricated on AlN/GaN heterostructures grown by MOVPE. C-V characterisation of these MIS structures revealed a minimum value of the interface state density Dit ≃ 1011 cm-2 eV-1. AlN/GaN MISFETs with 2 µm long gates demonstrated a high peak transconductance of gm ≃ 135 mS/mm, which exceeded previously reported results.
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