Low insertion loss silicon-based spatial light modulator with high reflective materials outside Fabry–Perot cavity**Project supported by the National Natural Science Foundation of China (Grant Nos. 61575076 and 61804148) and the National Key Research and Development Plan of China (Grant No. 2016YFB0402502).

Abstract

The extinction ratio and insertion loss of spatial light modulator are subject to the material problem, thus limiting its applications. One reflection-type silicon-based spatial light modulator with high reflective materials outside the Fabry–Perot cavity is demonstrated in this paper. The reflectivity values of the outside-cavity materials with different film layer numbers are simulated. The reflectivity values of 6-pair Ta2O5/SiO2 films at 1550 nm are experimentally verified to be as high as 99.9%. The surfaces of 6-pair Ta2O5/SiO2 films are smooth: their root-mean-square roughness values are as small as 0.53 nm. The insertion loss of the device at 1550 nm is only 1.2 dB. The high extinction ratio of the device at 1550 nm and 11 V is achieved to be 29.7 dB. The spatial light modulator has a high extinction ratio and low insertion loss for applications.