Low insertion loss, high power handling and good performance 90o phase shifter for X-band radar application

Abstract

In this paper, a monolithic microwave integrated circuit 90° phase shifter circuit for X band radar application is designed and fabricated using 0.1 μm pseudomorphic high electron mobility transistor technology based on GaAs with f t = 85 GHz. This block is used in passive phase shifters. The structure of 90° used double single port double throw (SPDT) in both input/output. The SPDT used a high yield and good performance switch. The switches have low insertion loss and phase variation. The measurement results of 90° block with ?6 V control voltage indicate that the insertion loss is less than ?1.6 dB and phase shift is 87 ± 3.5° over 8---12 GHz. The 1 dB compression point (P1dB) is more than 25 dBm. The die size is 1 mm2. The measurements show good correlation between simulation and measurement results. So, the result demonstrates the great potential of the proposed block for high performance phased array radar systems.