Low Gate Charge 20V Class Trench-aligning Lateral Power MOSFET

Abstract

A low gate charge high-side N-channel trench lateral power MOSFET (TLPM) is developed. Using trench self-aligning structure, a short gate length and minimum gate-drain overlap are realized, and low gate charge is achieved. The product of on-resistance and gate charge Ron*Qg of 61mOmega*nC (Ron*Qgd of 16.4 mOmega*nC) is the lowest for 20V class integrated device. Thanks to the deep junction depth of N drift region, TLPM has good electrostatic discharge (ESD) tolerance, which is a weak point of conventional lightly doped drain (LDD) MOS. TLPM withstands 2kV pulse test at human body model (HBM) and 200V pulse tests at machine model (MM)