Abstract
Be-doped cubic boron nitride (cBN) crystals were synthesized under high pressure and high temperature. Be atom was doped into the crystals by mixing of Be metal to the growth solvent, as evidenced by chemical analysis and secondary ion mass spectroscopy study. The morphology, size and color of the grown crystals were affected by the P–T growth condition as well as amount of addition of Be in the growth circumstance. New broad bands at the Raman shift energy of 215 and 535 cm −1 were observed in Be-doped cBN crystals. From the analogy of the frequency of the 535 cm −1 bands comparing to the Raman bands in boron doped diamond, it would be related to Be impurity-induced vibration.
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