Abstract

A photoacoustic (PA) method that had been used for analyzing energy fluxes in photovoltaic pn-junction devices /1,2/ has been refined so that data on single crystal Si solar cells show already at such low modulation frequencies as 200Hz the effects of electronic carrier diffusion in the base. Thus photothermal methods are able to examine actual transport properties, in addition to their use for device characterization. This is done by remote sensing of the PA-signal by varying the distance between the area of photo-excitation and detector area.

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