Low frequency noise variability in high-k/metal gate stack 28nm bulk and FD-SOI CMOS transistors

M. Haond,S. Haendler,J. Rosa,D. Golanski,C.A. Dimitriadis,T. Pahron,G. Ghibaudo,P. Perreau,E. G. Ioannidis,F. Arnaud,A. Bajolet,N. Planes,C. Fenouillet-Beranger,R.A. Bianchi

doi:10.1109/iedm.2011.6131581

Low frequency noise variability in high-k/metal gate stack 28nm bulk and FD-SOI CMOS transistors

M. Haond, S. Haendler + Show 12 more

https://doi.org/10.1109/iedm.2011.6131581

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Publication Date: Dec 1, 2011

Citations: 36

Affiliation: STMicroelectronics (France), Aristotle University of Thessaloniki, Institut de Microélectronique, Electromagnétisme et Photonique, CEA Grenoble, Université Grenoble Alpes, Grenoble Institute of Technology, Atomic Energy and Alternative Energies Commission

#Low Frequency Noise Variability #28nm FD-SOI CMOS + Show 8 more

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Abstract

In this paper, we present, for the first time, a thorough investigation of low frequency noise (LFN) and statistical noise variability in high-k/metal gate stack 28nm bulk and FD-SOI CMOS transistors. The experimental results are well interpreted by Monte-Carlo LFN simulations based on the random spatial and energy distribution of discrete traps in the gate dielectric. Our results clearly indicate that the LFN variability of 28nm FD-SOI CMOS technology is improved as compared to previous 45nm and 32nm bulk CMOS technologies.

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