Abstract
In this brief, we report an investigation of the low frequency noise in p-channel SiGe MOSFET's. At low gate bias the noise spectrum consists of several trap related generation-recombination (g-r) noise components. At higher gate bias, the noise spectrum is dominated by 1/f noise. The 1/f noise is attributed to a fluctuation in the number of free carriers and the effective slow state trap density at the Fermi energy calculated.
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