Low frequency noise in SiGe-base heterojunction bipolar transistors and SiGe-channel metal oxide semiconductor field effect transistors

Abstract

We show that low frequency noise (LFN) in SiGe-base heterojunction bipolar transistors and SiGe-channel pMOSFETs may be made significantly lower than that in their all-Si counterparts and indicate how this can be done. Optimization of LFN in SiGe channel pMOSFETs follows from a calculation involving a novel analytical model, which accounts for both static and LFN characteristics of SiGe-channel devices.