Abstract
A three-section analytic model of a Schottky-gate field-effect transistor is used to calculate the drain-current modulation sensitivity to low-frequency fluctuations in various regions of the active layer. The examined noise sources in the conducting channel and in the gate depletion region are fluctuations of the carrier and bound-charge concentrations, whose spectra can include generation-recombination and flicker components. The theoretical results are compared with measurements of low-frequency current noise.
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