Abstract
Silicon Schottky-barrier diodes have been developed which simulate the performance of point-contact (1N23WE) diodes in the standard mounts. These diodes along with 1N23 point-contact and back diodes were examined under 9.375 GHz excitation for noise temperature over the IF range of 5 kHz to 180 kHz. The Schottky diodes had noise temperatures comparable to and often lower than the back diodes. This fact, together with lower conversion loss and convenient impedance levels, makes the Schottky-barrier diodes generally advantageous in Doppler radars and similar applications.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
