Abstract
Low-frequency noise (LFN) in silicon-oxide-nitride-oxide-silicon (SONOS)-type memory that is based on trigate polycrystalline silicon thin-film transistors (TFTs) with a multiple nanowire (NW) channel structure was investigated. The flicker noise level in a multiple NW channel structure was lower than that in a standard single-channel device. The observation could be explained by the fewer grain boundaries in the nanoscale multiple channels, comparable to the grain size, and consequently lowers the impact of LFN in a SONOS-TFT.
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