Abstract
Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode- photodiode pairs is investigated for the first time at 300 K. It is shown that photocurrent fluctuations under LED illumination are smaller than photocurrent fluctuations under a black body illumination. When the photodiode is illuminated by LED, the spectral noise density follows the 1/f dependence. In the case of a black body illumination we observe a significant contribution of generation-recombination noise.
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