Abstract
The noise behaviour of p + -GaAs transmission line models (TLMs) associated with the technology of heterojunction bipolar transistors is presented. Devices of different lengths all exhibit excess noise composed of I/f and generation-recombination (GR) noise. Noise spectra are studied as a function of different bias and different sample lengths. Contact noise is shown to be negligible. Values of the Hooge parameter a are extracted
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