Low-Frequency Noise in High-Mobility a-InGaZnO/InSnO Nanowire Composite Thin-Film Transistors

Abstract

In this letter, high-performance amorphous indium–gallium–zinc-oxide (a-InGaZnO) and indium–tin-oxide (ITO) nanowire (NW) composite thin-film transistors (TFTs) are fabricated via a sol–gel approach. By incorporating 0.5 wt% ITO NWs into the a-InGaZnO thin film, the composite TFTs can achieve an enhanced field-effect mobility of 76.5 cm2/ $\text{V}\cdot \text{s}$ and a high current density of $73.3~\mu \text{A}/\mu \text{m}$ with 10- $\mu \text{m}$ channel length. The low-frequency noise (LFN) characteristic of the composite TFTs fits the classical 1/ ${f}$ noise model very well in the frequency range 1 to 1000 Hz. The subthreshold slope and LFN results provide an alternative explanation to the enhanced performance of the composite TFTs due to the decreased interfacial trap density. The a-InGaZnO/ITO NW composite TFTs are one of the promising candidates for the development of high-speed low-cost electronics.