Abstract
Low-frequency noise measurements are shown to provide a convenient and reasonably accurate (±10 per cent) means of measuring r'_{b}. Their application to the measurement of the factor <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n</tex> in the junction law <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p_{e} = p_{n} (e_^{qV/nkT} - 1)</tex> is also described, though the values of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n</tex> obtained from noise measurements do not check accurately with the values of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n</tex> determined by other methods. Experimental determinations of the variation of low-frequency noise figure with emitter-bias current are also presented for several transistor types. The observed behavior suggests that the principal source of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1/f</tex> noise in low-noise transistors may be in the emitter-base transition region instead of on the base surfaces where it is placed in presently accepted noise models.
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