Abstract
This letter investigates the low-frequency noise (LFN) properties of the multilayer MoTe2 field-effect transistors (FETs) before and after hydrophobic amorphous polymer (CYTOP) encapsulation in the subthreshold and linear regimes. The noise spectrum density of drain current (SID) shows that the LFN in the multilayer MoTe2 FETs nicely fits to a 1/ $f^{\gamma }$ power law with $\gamma \sim \textsf {1}$ in the frequency range of 10–200 Hz. From the dependence of SID on the drain current, carrier number fluctuation ( $\Delta n$ ) is considered as a dominant LFN mechanism from all operation regimes in the multilayer MoTe2 FETs. Extracted trap density (Nt) based on the McWhorter model in this letter was reduced at least more than one order level compared with the multilayer MoTe2 FETs without CYTOP passivation.
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