Low-Frequency Noise Assessment for Deep Submicrometer CMOS Technology Nodes

Abstract

This overview focuses on the different types of noise occurring in deep submicrometer silicon metal oxide semiconductor field-effect transistors and their use as an analytical tool. The noise sources comprise white noise, generation-recombination noise, random telegraph signal fluctuations, and or flicker noise. The fundamental basis of each noise type is briefly described and illustrated by some practical examples. In a second part, the impact of the properties of the silicon substrate (orientation, crystallization technique, silicon-on-insulator, SiGe) on the noise performance is discussed. Finally, the influence on the low-frequency noise behavior of different advanced process modules, such as gate stack, device isolation, silicidation, and gate engineering, is illustrated. © 2004 The Electrochemical Society. All rights reserved.