Abstract
This paper explores low-frequency noise analysis of TFET on selective buried oxide (SELBOX) with a δp + silicon germanium layer at the source channel junction in the presence of uniform and gaussian trap concentrations. Different electrical parameters of the proposed structure for the optimized position of gap are investigated. Lowest OFF current is obtained for the position of gap near the source region. Considering the current noise spectral density (SID) and voltage noise spectral density (SVG), the impact of noise on the device performance is analyzed. Noise spectral densities are compared in the presence of interface trap concentrations and δp+ Si1−xGex layer Ge-mole fractions. Variation of noise densities with frequency is explored. Improved ION/IOFF ratio and subthreshold swing are obtained in the presence of uniform trap as compared to gaussian trap.
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