Abstract
Post-treatment of replacement metal gate is investigated for the device performance improvement of high- k last p-type bulk FinFET using post-deposition annealing (PDA) and SF6 plasma treatment. Compared with untreated HfO2 reference, post-high- k deposition PDA and SF6 plasma-treated devices show improved driving current and hole mobility. With the carrier number fluctuations with correlated mobility fluctuation model, ~3 times lower input gate referred noise is observed in PDA and SF6 plasma-treated devices compared with untreated FinFETs. Post-treatments suppress the trap density of high- k last FinFET. PDA reduces oxide bulk trap whereas SF6 plasma affects both interface and oxide bulk trap.
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