Abstract
The dispersion in the low-frequency transconductance and output resistance and its effect on the voltage gain of an ion-implanted InP JFET are reported. The dispersion consists of a reduction in both the transconductance and the output resistance occurring between 10 Hz and 1 MHz. The primary transconductance dispersion mechanism appears to be due to surface traps located in the ungated access regions, while the output resistance dispersion appears to be caused by traps located in the substrate under the channel. This conclusion is supported by transient response measurements. An equivalent circuit which simulates the dispersion is presented. This circuit can be used for the design of monolithic fiber-optic preamplifiers and other small-signal circuits.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
