Abstract
Frequency domain measurements on GaSe thin films have been carried out in the frequency range 10 −2 to 10 4 Hz and temperature range 300 to 480 K. The measured samples with different contacts have shown low frequency dispersion (LFD) with activation energies 0.66±0.03 eV, 0.72±0.03 eV and 0.65±0.03 eV, respectively. Complex capacitance C( ω) behaviour of GaSe thin film with different contacts suggests possible contribution of diffused contact material.
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