Abstract
A.c. conduction in thermally grown silicon dioxide films is studied in the wide range of low frequencies 10-2 Hz-10 4 Hz. A conductivity-frequency dependence of the form onc.xwn, with values of n smaller than or equal to unity, is observed. A Debye-type loss peak moving to higher frequencies with rise in temperature is also observed in some samples. The activation energy for this process is found to be 1 I eV. The conductivity-frequency dependence may be explained as a hopping process, while the Debyo-type loss peak may be due to the presence of some impurity ion species.
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