Low-Frequency and Random Telegraph Noise in 14-nm Bulk Si Charge-Trap Transistors

Abstract

Effects of programming/erasing (P/E) and total-ionizing dose (TID) are investigated on 2-and 40-fin charge-trap transistors (CTTs) fabricated in a 14-nm bulk-Si CMOS technology. Significant random telegraph noise (RTN) is observed in as-processed CTTs, especially for 2-fin devices. Trapped charge in programed devices does not significantly affect 1/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit{f}$</tex-math> </inline-formula> noise magnitudes, but P/E leads to trap activation/deactivation, causing changes in border-trap energy and spatial distributions. TID irradiation activates a large number of stable radiation-induced traps.