Abstract
In this paper, we present a physics-based, and analytical above-threshold low frequency 1/ f noise model for short-channel LDD MOSFETs operated both in the triode and pentode modes. We first develop an I– V model for LDD MOSFETs. The model was based on the quasi-two-dimensional Poisson equation and is a charge control model, expressed as a function of inversion charge density. The channel-length modulation was solved by using the quasi 2D approach and which was incorporated into the drain current equation. The parasitic source/drain resistance, the mobility reduction due to the transverse field, and the carrier velocity saturation have also been taken into consideration. Then the 1/ f drain current noise model was developed on the basis of oxide-trap-induced carrier number and surface mobility fluctuations. The I– V and 1/ f noise models were successfully applied to submicron LDD nMOSFETs and a good agreement between the modeled and experimental data was obtained.
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