Low-firing of BiSbO 4 microwave dielectric ceramic with V 2O 5–CuO addition

Abstract

Effects of 1.0 wt.% V 2O 5–CuO mixture addition on the sintering behavior, phase composition and microwave dielectric properties of BiSbO 4 ceramics have been investigated. BiSbO 4 ceramics can be well densified below temperature about 930 °C with 1.0 wt.% V 2O 5–CuO mixtures addition with different ratios of CuO to V 2O 5. The formation of BiVO 4 phase and substitution of Cu 2+ can explain the decrease of sintering temperature. Dense BiSbO 4 ceramics sintered at 930 °C for 2 h exhibited good microwave dielectric properties with permittivity between 19 and 20.5, Qf values between 19,000 and 40,000 GHz and temperature coefficient of resonant frequency shifting between −71.5 ppm °C −1 and −77.8 ppm °C −1. BiSbO 4 ceramics could be a candidate for microwave application and low temperature co-fired ceramics technology.