Low field magnetoresistance properties of (La0.75Sr0.25)1.05Mn0.95O3 polycrystalline thin films on a-SiO2/Si substrates prepared by ex-situ solid phase crystallization

Abstract

We report the low field magnetoresistance (LFMR) properties of (La0.75Sr0.25)1.05Mn0.95O3(LSMO) films on a-SiO2/Si substrates, prepared by ex-situ solid phase crystallization of amorphous films deposited by dc-magnetron sputtering at room temperature. The average grain size of the LSMO films was gradually increased with increasing annealing temperature (Tan) and film thickness. High Tan also caused the growth of an amorphous inter-diffusion layer between a-SiO2 and LSMO. The highest LFMR values of 16 and 1.0 % were achieved at 100 K, 1.2 kOe and 300 K, 0.5 kOe, respectively, from an LSMO film of 200 nm thickness annealed at 900 °C. In accordance with a modified brick layer model, grain boundary areal resistance gradually increased with increasing Tan and decreasing film thickness due to the penetration of the amorphous inter-diffused phase into the LSMO grain boundary. Improved LFMR values are attributable to modification of the LSMO grain boundary into a more effective spin-dependent scattering center.