Low Field Magnetoresistance Effect of Plastically Deformed n-type Silicon

Abstract

Magnetoresistance, Hall effect and resistivity are measured for n-type silicon which has been plastically deformed by compression, and it is found that the symmetry relation between relaxation time tensor and effecmass tensor is violated, although it holds in as grown silicon sample. It is ascribed to the presence of dislocation scattering, violating the original symmetry of relaxation time tensor of lattice scattering. Read's theory is extended, when magnetic field is parallel to dislocation line, to explain the magnetoresistance in the presence of dislocation on the basis of spherical energy surface, and dislocation density, radius of space charge cylinder around the dislocation, and fraction of dislocation sites that have accepted electrons are estimated.